| Autor: |
Alam, Muhammad A., Smith, R. Kent, Weir, Bonnie E., Silverman, Paul J. |
| Předmět: |
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| Zdroj: |
Nature; 11/28/2002, Vol. 420 Issue 6914, p378, 1p |
| Abstrakt: |
In thick dielectrics, electrical breakdown is caused by the generation of spatially and temporally correlated defects that are produced — as in lightning — by feedback between defect formation and local stress. New defects are created in the vicinity of existing defects, leading to rapid and correlated propagation of field-induced defect chains that cause breakdown. By contrast, we show here that defects formed in ultrathin films subjected to realistic electrical stress remain spatially and temporally uncorrelated, even when multiple 'shorts' (chains of defects) begin to bridge the thickness of the films. Besides their relevance to different applications of thin dielectric films, our results have positive implications for the scalability of modern integrated circuits. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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