| Autor: |
Avellaneda, D., Krishnan, B., Das Roy, T., Castillo, G., Shaji, S. |
| Předmět: |
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| Zdroj: |
Applied Physics A: Materials Science & Processing; Feb2013, Vol. 110 Issue 3, p667-672, 6p, 3 Black and White Photographs, 4 Graphs |
| Abstrakt: |
This paper presents modification of tin sulfide (SnS) thin films by pulsed laser irradiation. Tin sulfide films of 1 μm thickness were prepared using chemical bath deposition (CBD) technique. The chemical bath contained 5 ml acetone, 12 ml of triethanolamine, 8 ml of 1 M thioacetamide, 10 ml of 4 M ammonium hydroxide and 65 ml of distilled water. The chemical bath was kept at a constant temperature of 60 °C for 6 h which resulted in SnS films with 500 nm thickness. By double deposition, the final thickness of SnS thin films obtained was 1 μm. Laser processing was conducted to modify the structure, morphology and physical properties of the SnS thin films. The laser specifications were pulsed Nd:YAG laser with 532 nm wavelength, 300 mJ pulse energy and 10 ns pulse width. Properties of the laser-irradiated SnS thin films were compared with the as-prepared SnS thin films. The changes in structure, morphology, optical and electrical properties of the laser-irradiated SnS thin films were described. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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