| Autor: |
Ajoy, Arvind, Laux, S. E., Murali, Kota V. R. M., Karmalkar, Shreepad |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Feb2013, Vol. 113 Issue 6, p064506, 9p, 1 Diagram, 1 Chart, 5 Graphs |
| Abstrakt: |
We present a TCAD (Technology Computer Aided Design) compatible multiscale model of phonon-assisted band-to-band tunneling in semiconductors, which incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the [100], [110], and [111] directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in tunnel FETs and in small geometry MOSFETs and FINFETs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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