| Autor: |
Sorokin, L. M., Savkina, N. S., Shuman, V. B., Lebedev, A. A., Mosina, G. N., Hutchison, G. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; Nov2002, Vol. 28 Issue 11, p935, 4p |
| Abstrakt: |
Transverse sections of the (11-20) cuts of a 6H-SiC substrate-porous SiC layer-epitaxial 6H-SiC layer structure were studied using electron microscopy. An intermediate layer is revealed between pores and unetched SiC which consists of a damaged region containing two-dimensional defects and a completely amorphous region. Energy-dispersive X-ray spectra measured within local (∼3 nm) areas in various regions of the transverse sections of the structure studied showed that the intermediate layer is enriched with carbon in comparison to the stoichiometric substrate composition. The excess carbon content is retained in the layer of epitaxial SiC contacting the porous layer. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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