| Autor: |
Ho, M.-Y., Gong, H., Wilk, G. D., Busch, B. W., Green, M. L., Lin, W. H., See, A., Lahiri, S. K., Loomans, M. E., Räisänen, Petri I., Gustafsson, T. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/25/2002, Vol. 81 Issue 22, p4218, 3p, 2 Charts, 3 Graphs |
| Abstrakt: |
We demonstrate significantly improved thermal stability of the amorphous phase for hafnium-based gate dielectrics through the controlled addition of A1[SUB2]O[SUB3]. The (HfO[SUB2])[SUBx](A1[SUB2]O[SUB3])[SUB1-x] films, deposited using atomic layer deposition, exhibit excellent control over a wide range of composition by a suitable choice of the ratio between the A1 and Hf precursor pulses. By this method, extremely predictable hafnium aluminate compositions are obtained, with Hf cation fractions ranging from 20% up to 100%, as measured by medium energy ion scattering. Using x-ray diffraction, we show that (HfO[SUB2])x(A1[SUB2]O[SUB3])[SUB1-x] films with Hf:A1~3:1 (25% Al) remain amorphous up to 900 °C, while films with Hf:A1~1:3 (75% Al) remain amorphous after a 1050°C spike anneal. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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