| Autor: |
Chang Park, Yun, Heon Kim, Young, Nahm, Ho-Hyun, Noh, Ji-Young, Kim, Yong-Sung, Kim, Joondong, Seok Lee, Won, Yang, Jun-Mo, Park, Jeonghee |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/21/2013, Vol. 102 Issue 3, p033103-033103-5, 1p, 1 Black and White Photograph, 3 Graphs |
| Abstrakt: |
An inversion domain boundary (IDB) related to an interstitial stacking layer (ISL) was observed on the {0002} planes of the wurtzite (WZ) structure of tin (Sn)-doped ZnO nanobelts. Quantitative STEM analysis confirmed that the ISL was composed of Sn element. Oxygen related to the ISL was in a triangular coordination as determined by analyzing the electron energy-loss spectra. Expansion of the interplanar spacing along the c-axis of a WZ structure was observed near the IDB while that along the a-axis was constrained. Density functional theory calculations were carried out to elucidate the origin of microstructural evolution. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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