| Autor: |
Kajikawa, Y., Okamura, K., Inoko, Y., Mizuki, H. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 12/15/2012, Vol. 112 Issue 12, p123712, 8p |
| Abstrakt: |
Hall-effect measurements were performed in the temperature range of 10-400 K on degenerate n-type polycrystalline InAsxP1-x films deposited on glass substrates by molecular-beam deposition at 240 or 320 °C. For the analysis of the temperature dependence of electrical conductivity of these films, we use a model developed in our preceding paper, which is based on an energy-filtering model with potential fluctuations at grain boundaries, but with refining it so as to be applicable for a non-parabolic conduction band. Using the refined version of our energy-filtering model, the experimental curves of temperature-dependent electrical conductivity are fitted to deduce the mean free path as well as the mean value and the standard deviation of the barrier height. The analysis results show that, in almost of the InAsxP1-x films investigated, the grain-boundary potential barriers fluctuate in height across the Fermi level. Owing to the substantially low potential barrier height, the InAsxP1-x film with x = 0.65 exhibited a high electron mobility of about 250 cm2/(Vs) in spite of the low substrate temperature of 320 °C. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
