1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition.

Autor: Gao, Cheng, Li, Hai-ou, Huang, Jiao-ying, Diao, Sheng-long
Zdroj: Journal of Central South University; Dec2012, Vol. 19 Issue 12, p3444-3448, 5p
Abstrakt: InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm/V-s with sheet carrier densities larger than 4.6×10 cm. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/mm. Excellent depletion-mode operation, with a threshold voltage of −0.3 V and I of 673 mA/mm, is realized. The non-alloyed ohmic contact special resistance is as low as 1.66×10 Ω/cm, which is so far the lowest ohmic contact special resistance. The unity current gain cut off frequency ( f) and the maximum oscillation frequency ( f) are 42.7 and 61.3 GHz, respectively. These results are very encouraging toward manufacturing InP-based HEMT by MOCVD. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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