| Autor: |
Autran, J. L., Serre, S., Semikh, S., Munteanu, D., Gasiot, G., Roche, P. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Dec2012 Part 1, Vol. 59 Issue 6, p2658-2665, 8p |
| Abstrakt: |
The interactions of thermal and low energy (<1 MeV) neutrons with natural boron-doped silicon has been investigated using Geant4 numerical simulations. The consequences of these interactions on the soft-error rate of 40 nm SRAM at ground level have been carefully analyzed and quantified from thermal neutron accelerated tests at LLB facility, real-time altitude measurements on the ASTEP platform and numerical simulation using a new version of the TIARA Monte-Carlo code (TIARA-G4) capable of taking into account a more accurate description of the SRAM geometry and the true isotopic composition of circuit materials from silicon to back-end-of-line levels. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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