| Autor: |
Khaja, Fareen Adeni, Rao, K. V., Ni, Chi-Nung, Muthukrishnan, Shankar, Lei, Jianxin, Darlark, Andrew, Peidous, Igor, Brand, Adam, Henry, Todd, Variam, Naushad |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; Nov2012, Vol. 1496 Issue 1, p42-45, 4p |
| Abstrakt: |
Nickel silicide (NiSi) contacts are adopted in advanced CMOS technology nodes as they demonstrate several benefits such as low resistivity, low Si consumption and formation temperature. But a disadvantage of NiSi contacts is that they exhibit high electron Schottky barrier height (SBH), which results in high contact resistance (Rc) and reduces the NMOS drive current. To reduce SBH for NMOS, we used phosphorous (P) ion implantation into NiPt silicide with optimized anneal in order to form dopant segregated Schottky (DSS). Electrical characterization was performed using test structures such as Transmission Line Model, Cross-Bridge Kelvin Resistor, Van der Pauw and diodes to extract Rc and understand the effects of P+ DSS on [uppercase_phi_synonym]Bn tuning. Material characterization was performed using SIMS, SEM and TEM analysis. We report ∼45% reduction in Rc over reference sample by optimizing ion implantation and anneal conditions (spike RTA, milli-second laser anneals (DSA)). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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