MIND+ system; More universal dose patterns by single-step ion implantation.

Autor: Okamoto, Yasuharu, Ninomiya, Shiro, Ochi, Akihiro, Ueno, Yusuke, Yamada, Tatsuya, Kimura, Yasuhiko, Kudo, Tetsuya, Koike, Masazumi, Suetsugu, Noriyuki, Ookita, Yoshiaki, Tsukihara, Mitsukuni, Sato, Fumiaki, Fuse, Genshu, Ueno, Kazuyoshi, Sugitani, Michiro
Předmět:
Zdroj: AIP Conference Proceedings; Nov2012, Vol. 1496 Issue 1, p348-351, 4p
Abstrakt: Electrical characteristics of semi-conductor devices within a wafer are expected to be uniform based on control of the dose pattern during the ion implant process. SEN developed the MIND system (Mapping of Intentional Non-uniform Dosage), to provide such dose pattern control. This capability has been enhanced with MIND+. The new system provides improved two-dimensional dose pattern control with more degrees of freedom and greater accuracy than the original MIND system. In addition, MIND+ can generate practical dose patterns (see below) while using a single step implant. As a result, MIND+ provides a very powerful tool for yield enhancement without sacrificing throughput. This paper will provide more detail on the capabilities and practical applications of the MIND+ system. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index