| Autor: |
Gao, Feng, Chen, Di, Lu, Bin, Tuller, Harry L., Thompson, Carl V., Keller, Stacia, Mishra, Umesh K., Palacios, Tomás |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Oct2012, Vol. 33 Issue 10, p1378-1380, 3p |
| Abstrakt: |
In this letter, ambient moisture has been identified as a previously unrecognized cause of current collapse in AlGaN/GaN high-electron-mobility transistors. Unpassivated devices exposed to dry air or protected with a hydrophobic passivation, such as vapor-deposited fluorocarbon, showed negligible current collapse under 250-ns pulsed measurements. A mechanism based on the ionization and deionization of the water molecules at the device surface has been proposed to explain this behavior. The use of a hydrophobic passivation to prevent dc-to-RF dispersion works even when it is not directly in contact with the semiconductor surface, which allows the engineering of multistack passivation layers to eliminate current collapse while minimizing parasitic capacitance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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