| Autor: |
Guo-Sheng Wang, Hai Lu, Feng Xie, Dun-Jun Chen, Fang-Fang Ren, Rong Zhang, You-Dou Zheng |
| Předmět: |
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| Zdroj: |
Chinese Physics Letters; Sep2012, Vol. 29 Issue 9, p1-4, 4p |
| Abstrakt: |
AlGaN-based back-illuminated solar-blind ultraviolet (UV) p-i-n photodetectors (PDs) with high quantum efficiency are fabricated on sapphire substrates. To improve the overall performance of the PD, a series of structural design considerations and growth procedures are implemented in the epitaxy process. A distinct wavelengthselective photo-response peak of the PD is obtained in the solar-blind region. When operating in photovoltaic mode, the PD exhibits a solar-blind/UV rejection ratio of up to 4 orders of magnitude and a peak responsivity of ∼113.5mA/W at 270 nm, which corresponds to an external quantum efficiency of ∼52%. Under a reverse bias of -5 V, the PD shows a low dark current of ∼1.8 pA and an enhanced peak quantum efficiency of ∼64%. The thermal noise limited detectivity is estimated to be ∼3.3 × 1013 cm·Hz1/2W-1. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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