A low voltage SiGe BJT integrated RF amplifier with very high third order intercept point.
| Autor: | Kormanyos, B.K., Friddell, T.H., Quach, T.K., Creech, G.L., Orlando, P.L., Patel, V.J., Watson, P.M., Axtell, H.S., Neidhard, R.A., Jessen, G.H., Drangmeister, R.G. |
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| Zdroj: | Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems; 2005, p3-3, 1p |
| Databáze: | Complementary Index |
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