Impact of the forward bias on the radiative recombination efficiency in blue (In,Ga)N/GaN quantum-well diodes with an electron reservoir layer.

Autor: Otsuji, N., Takahashi, Y., Satake, A., Fujiwara, K., Shue, J.K., Jahn, U., Kostial, H., Grahn, H.T.
Zdroj: 13th International Conference on Semiconducting & Insulating Materials, 2004. SIMC-XIII-2004; 2004, p276-280, 5p
Databáze: Complementary Index