| Autor: |
Shao, Jun, Lu, Wei, Tsen, G. K. O., Guo, Shaoling, Dell, J. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Sep2012, Vol. 112 Issue 6, p063512, 8p, 5 Graphs |
| Abstrakt: |
Temperature (11-250 K) and excitation power (5-480 mW) dependent infrared photoluminescence (PL) measurements are conducted on a HgTe/Hg0.05Cd0.95Te superlattice (SL) sample in a spectral range of 5-18 μm with adequate spectral resolution and signal-to-noise ratio. Three PL components are identified from the evolution of the PL lineshape with temperature although the full-width at half-maximum (FWHM) of the whole PL signal is only about 7 meV at 11 K, for which different changes of the energy, FWHM, and integral intensity are evidenced. The mechanisms are clarified that the medium-energy component is due to electron-heavy hole intersubband transition, while the low-energy (LE) component correlates to localized states and the high-energy (HE) one may originate in interfacial inhomogeneous chemical intermixing and Brillouin-zone boundary effects. The LE and HE component-related effects are responsible for the PL quality of the SL at the temperatures well below and above 77 K, respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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