A high gain L-band GaAs FET technology for 28 V operation.
| Autor: | Inoue, K., Nagahara, M., Ui, N., Haematsu, H., Sano, S., Fukaya, J. |
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| Zdroj: | 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535); 2004, p821-821, 1p |
| Databáze: | Complementary Index |
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