A methodology to characterize device-level endurance in 1T1C (1-transistor and 1-capacitor) FRAM.
| Autor: | Ahn, W.S., Jung, D.J., Hong, Y.K., Kim, H.H., Kang, Y.M., Kang, S.K., Kim, H.S., Kim, J-.H., Jung, W.W., Jung, J.Y., Ko, H.K., Choi, D.Y., Kim, S.Y., Lee, E.S., Kang, J.Y., Wei, C., Lee, S.Y., A, K.H., Jung, H. S. |
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| Zdroj: | 2008 17th IEEE International Symposium on the Applications of Ferroelectrics; 2008, p1-4, 4p |
| Databáze: | Complementary Index |
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