High power 808 nm diode lasers grown by MOCVD using MO group V sources in N2 ambient.
| Autor: | Tang Xiahong, Bo baoxue, Zhang Baolin, Tjin Swee Chuan |
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| Zdroj: | 2004 International Conference on Communications, Circuits & Systems (IEEE Cat. No.04EX914); 2004, p609-609, 1p |
| Databáze: | Complementary Index |
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