Evidence of surface states for 4H-SiC MESFETs on semi-insulating substrates by current transient spectroscopy.
| Autor: | Gassoumi, M., Dermoul, I., Chekir, F., Sghaier, N., Maaref, H., Bluet, J.M., Guillot, G., Morvan, E., Noblanc, O., Dua, C., Brylinski, C. |
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| Zdroj: | 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716); 2004, p417-417, 1p |
| Databáze: | Complementary Index |
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