An improved RF MOSFET model including scalable gate resistance and external inductances.
Autor: | Jiyong Cha, Jun-Young Cha, Dae-Hyoun Jung, Seonghearn Lee |
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Zdroj: | 2008 International SoC Design Conference; 2008, pI431-I432, 2p |
Databáze: | Complementary Index |
Externí odkaz: |