Two dimensional device simulation and fabrication of mesa SOI vertical dual carrier field effect transistor with effective channel length of 30nm for switching ASIC and SOC.
| Autor: | Yang, R., Li, G.H., Xu, Y.Z., Chao, Y.F., Tang, Z.M., Yang, Y.H., Ma, B.K., Huang, D.H., Xu, P., Shen, S.G., Lin, C.L., Wu, C.L., Yan, F.Z., Han, D.J., Ren, Y.L., Yu, L.K., Cai, I.M., Tian, X.N., Ji, Y.Z., Du, D.S. |
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| Zdroj: | 2005 6th International Conference on ASIC; 2005, p1102-1106, 5p |
| Databáze: | Complementary Index |
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