Effective Schottky Barrier lowering for contact resistivity reduction using silicides as diffusion sources.

Autor: Zhen Zhang, Pagette, F., D'Emic, C., Yang, B., Lavoie, C., Ray, A., Zhu, Y., Hopstaken, M., Maurer, S., Murray, C., Guillorn, M., Klaus, D., Bucchignano, J.J., Bruley, J., Ott, J., Pyzyna, A., Newbury, J., Song, W., Zuo, G., Lee, K.-L.
Zdroj: 2010 International Symposium on VLSI Technology Systems & Applications (VLSI-TSA); 2010, p154-155, 2p
Databáze: Complementary Index