On hot-carrier induced degradation, temperature, bias and emitter geometry dependences of the DC characteristics of polysilicon-emitter bipolar transistors.
| Autor: | Sheng, S.R., McAlister, S.P., Storey, C., Lee, L.-S., Hwang, H.P. |
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| Zdroj: | 10th IEEE International Symposium on Electron Devices for Microwave & Optoelectronic Applications; 2002, p89-94, 6p |
| Databáze: | Complementary Index |
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