Modeling isolation-induced mechanical stress effect on SOI MOS devices.
| Autor: | Ke-Wei Su, Kuang-Hsin Chen, Tang-Xuan Chung, Hung-Wei Chen, Cheng-Chuan Huang, Hou-Yu Chen, Chang-Yun Chang, Di-Hong Lee, Cheng-Kuo Wen, Yi-Ming Sheu, Sheng-Jier Yang, Chung-Shi Chiang, Chien-Chao Huang, Fu-Liang Yang, Yu-Tai Chia |
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| Zdroj: | IEEE International SOI Conference, 2003; 2003, p80-82, 3p |
| Databáze: | Complementary Index |
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