Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs.

Autor: Malbert, N., Labat, N., Curutchet, A., Sury, C., Hoel, V., de Jaeger, J.-C., Defrance, N., Douvry, Y., Dua, C., Oualli, M., Piazza, M., Bru-Chevallier, C., Bluet, J.-M., Chikhaoui, W.
Zdroj: 2010 IEEE International Reliability Physics Symposium (IRPS); 2010, p139-145, 7p
Databáze: Complementary Index