Asymmetric 6T SRAM with two-phase write and split bitline differential sensing for low voltage operation.
Autor: | Nalam, S., Chandra, V., Pietrzyk, C., Aitken, R.C., Calhoun, B.H. |
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Zdroj: | 2010 11th International Symposium on Quality Electronic Design (ISQED); 2010, p139-146, 8p |
Databáze: | Complementary Index |
Externí odkaz: |