100 A and 3.1 kV 4H-SiC GTO thyristors.
| Autor: | Van Campen, S., Ezis, A., Zingaro, J., Storaska, G., Clarke, R.C., Elliott, K., Temple, V., Hits, D., Thompson, M., Roe, K., Hansen, T. |
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| Zdroj: | Proceedings IEEE Lester Eastman Conference on High Performance Devices; 2002, p58-64, 7p |
| Databáze: | Complementary Index |
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