Integration of Single Damascene 85/85 nm L/S copper trenches in Black Diamond using 193 nm optical lithography with dipole illumination.

Autor: Van Olmen, J., Wu, W., Van Hove, M., Travaly, Y., Brongersma, S.H., Eyckens, B., Maenhoudt, M., Van Aelst, J., Struyf, H., Demuynck, S., Tokei, Z., Vervoort, I., Sijmus, B., Vos, I., Ciofi, I., Stucchi, M., Maex, K., Iacopi, F.
Zdroj: Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695); 2003, p171-173, 3p
Databáze: Complementary Index