Improved mathematical model for the investigation of deep traps into semiconductor devices: application to Metamorphic HEMT.
| Autor: | Jaafar, M., Aupetit-Berthelemot, C., Cluzeau, T., Teyssier, J.P. |
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| Zdroj: | Microwave Measurement Symposium, 2009 74th ARFTG; 2009, p1-6, 6p |
| Databáze: | Complementary Index |
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