A study of barrier engineered Al2O3 and HfO2 high-K charge trapping devices (BE-MAONOS and BE-MHONOS) with optimal high-K thickness.
| Autor: | Sheng-Chih Lai, Chih-Ping Chen, Pei-Ying Du, Hang-Ting Lue, Dawei Heh, Chih-Yen Shen, Hsueh, F.K., Wu, H.Y., Jeng-Hwa Liao, Jung-Yu Hsieh, Wu, M.T., Hsu, F.H., Hong, S.P., Yeh, C.T., Yung-Tai Hung, Kuang-Yeu Hsieh, Chih-Yuan Lu |
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| Zdroj: | 2010 IEEE International Memory Workshop (IMW); 2010, p1-4, 4p |
| Databáze: | Complementary Index |
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