An orthogonal 6F2 trench-sidewall vertical device cell for 4 Gb/16 Gb DRAM.
| Autor: | Radens, C.J., Kudelka, S., Nesbit, L., Malik, R., Dyer, T., Dubuc, C., Joseph, T., Seitz, M., Clevenger, L., Arnold, N., Mandelman, J., Divakaruni, R., Casarotto, D., Lea, D., Jaiprakash, V.C., Sim, J., Faltermeier, J., Low, K., Strane, J., Halle, S. |
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| Zdroj: | International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138); 2000, p349-352, 4p |
| Databáze: | Complementary Index |
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