High quality ultra thin CVD HfO2 gate stack with poly-Si gate electrode.
| Autor: | Lee, S.J., Luan, H.F., Bai, W.P., Lee, C.H., Jeon, T.S., Senzaki, Y., Roberts, D., Kwong, D.L. |
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| Zdroj: | International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138); 2000, p31-34, 4p |
| Databáze: | Complementary Index |
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