4-bit per cell NROM reliability.
| Autor: | Eitan, B., Cohen, G., Shappir, A., Eli Lusky, Givant, A., Janai, M., Bloom, I., Polansky, Y., Dadashev, O., Lavan, A., Sahar, R., Maayan, E. |
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| Zdroj: | IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p539-542, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
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