Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability.
| Autor: | Hegde, R.I., Triyoso, D.H., Tobin, P.J., Kalpat, S., Ramon, M.E., Tseng, H.-H., Schaeffer, J.K., Luckowski, E., Taylor, W.J., Capasso, C.C., Gilmer, D.C., Moosa, M., Haggag, A., Raymond, M., Roan, D., Nguyen, J., La, L.B., Hebert, E., Cotton, R., Wang, X.-D. |
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| Zdroj: | IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p35-38, 4p |
| Databáze: | Complementary Index |
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