Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO2 stack.
| Autor: | Tseng, H.-H., Capasso, C.C., Schaeffer, J.K., Hebert, E.A., Tobin, P.J., Gilmer, D.C., Triyoso, D., Ramon, M.E., Kalpat, S., Luckowski, E., Taylor, W.J., Jeon, Y., Adetutu, O., Hegde, R.I., Noble, R., Jahanbani, M., El Chemali, C., White, B.E. |
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| Zdroj: | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p821-824, 4p |
| Databáze: | Complementary Index |
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