Impact of parasitic resistance and silicon layer thickness scaling for strained-silicon MOSFETs on relaxed Si1-xGex virtual substrate.
| Autor: | Kawasaki, H., Ohuchi, K., Oishi, A., Fujii, O., Tsujii, H., Ishida, T., Kasai, K., Okayama, Y., Kojima, K., Adachi, K., Aoki, N., Kanemura, T., Hagishima, D., Fujiwara, M., Inaba, S., Ishimaru, K., Nagashima, N., Ishiuchi, H. |
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| Zdroj: | IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p169-172, 4p |
| Databáze: | Complementary Index |
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