Properties of ion-implanted strained-Si/SiGe heterostructures.
| Autor: | Sugii, N., Morioka, J., Ishidoya, Y., Koyama, K., Inada, T. |
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| Zdroj: | Extended Abstracts of the Fifth International Workshop on Junction Technology; 2005, p11-14, 4p |
| Databáze: | Complementary Index |
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