A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique.
Autor: | Ota, K., Endo, K., Okamoto, Y., Ando, Y., Miyamoto, H., Shimawaki, H. |
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Zdroj: | 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p |
Databáze: | Complementary Index |
Externí odkaz: |