A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique.

Autor: Ota, K., Endo, K., Okamoto, Y., Ando, Y., Miyamoto, H., Shimawaki, H.
Zdroj: 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p
Databáze: Complementary Index