A 25-nm gate-length FinFET transistor module for 32nm node.
| Autor: | Chang-Yun Chang, Tsung-Lin Lee, Wann, C., Li-Shyue Lai, Hung-Ming Chen, Chih-Chieh Yeh, Chih-Sheng Chang, Chia-Cheng Ho, Jyh-Cherng Sheu, Tsz-Mei Kwok, Feng Yuan, Shao-Ming Yu, Chia-Feng Hu, Jeng-Jung Shen, Yi-Hsuan Liu, Chen-Ping Chen, Shin-Chih Chen, Li-Shiun Chen, Chen, L., Yuan-Hung Chiu |
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| Zdroj: | 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p |
| Databáze: | Complementary Index |
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