Demonstration of scaled 0.099µm2 FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology.
| Autor: | Veloso, A., Demuynck, S., Ercken, M., Goethals, A.M., Locorotondo, S., Lazzarino, F., Altamirano, E., Huffman, C., De Keersgieter, A., Brus, S., Demand, M., Struyf, H., De Backer, J., Hermans, J., Delvaux, C., Baudemprez, B., Vandeweyer, T., Van Roey, F., Baerts, C., Goossens, D. |
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| Zdroj: | 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p |
| Databáze: | Complementary Index |
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