High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling.
| Autor: | Bangsaruntip, S., Cohen, G.M., Majumdar, A., Zhang, Y., Engelmann, S.U., Fuller, N., Gignac, L.M., Mittal, S., Newbury, J.S., Guillorn, M., Barwicz, T., Sekaric, L., Frank, M.M., Sleight, J.W. |
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| Zdroj: | 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p |
| Databáze: | Complementary Index |
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