InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack.
| Autor: | Huang, J., Goel, N., Zhao, H., Kang, C.Y., Min, K.S., Bersuker, G., Oktyabrsky, S., Gaspe, C.K., Santos, M.B., Majhi, P., Kirsch, P.D., Tseng, H.-H., Lee, J.C., Jammy, R. |
|---|---|
| Zdroj: | 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|