Modeling of stress-retarded orientation-dependent oxidation: shape engineering of silicon nanowire channels.
| Autor: | Ma, F.-J., Rustagi, S.C., Zhao, H., Samudra, G.S., Singh, N., Budhaaraju, K.D., Lo, G.Q., Kwong, D.L. |
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| Zdroj: | 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p |
| Databáze: | Complementary Index |
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