Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory.
| Autor: | Chiu, J.P., Chou, Y.L., Ma, H.C., Tahui Wang, Ku, S.H., Zou, N.K., Chen, V., Lu, W.P., Chen, K.C., Chih-Yuan Lu |
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| Zdroj: | 2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p |
| Databáze: | Complementary Index |
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