Performance enhancement on sub-70 nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator (TM-SGOI) substrate with raised S/D.

Autor: Lee, B.H., Mocuta, A., Bedell, S., Chen, H., Sadana, D., Rim, K., O'Neil, P., Mo, R., Chan, K., Cabral, C., Lavoie, C., Mocuta, D., Chakravarti, A., Mitchell, R.M., Mezzapelle, J., Jamin, F., Sendelbach, M., Kermel, H., Gribelyuk, M., Domenicucci, A.
Zdroj: Digest. International Electron Devices Meeting; 2002, p946-948, 3p
Databáze: Complementary Index