Electrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication.

Autor: Guarini, K.W., Topol, A.W., Ieong, M., Yu, R., Shi, L., Newport, M.R., Frank, D.J., Singh, D.V., Cohen, G.M., Nitta, S.V., Boyd, D.C., O'Neil, P.A., Tempest, S.L., Pogge, H.B., Purushothaman, S., Haensch, W.E.
Zdroj: Digest. International Electron Devices Meeting; 2002, p943-945, 3p
Databáze: Complementary Index