Dual-metal gate CMOS with HfO2 gate dielectric.
| Autor: | Samavedam, S.B., La, L.B., Smith, J., Dakshina-Murthy, S., Luckowski, E., Schaeffer, J., Zavala, M., Martin, R., Dhandapani, V., Triyoso, D., Tseng, H.H., Tobin, P.J., Gilmer, D.C., Hobbs, C., Taylor, W.J., Grant, J.M., Hegde, R.I., Mogab, J., Thomas, C., Abramowitz, P. |
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| Zdroj: | Digest. International Electron Devices Meeting; 2002, p433-436, 4p |
| Databáze: | Complementary Index |
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