Extreme scaling with ultra-thin Si channel MOSFETs.
| Autor: | Doris, B., Meikei Ieong, Kanarsky, T., Ying Zhang, Roy, R.A., Dokumaci, O., Zhibin Ren, Fen-Fen Jamin, Leathen Shi, Natzle, W., Hsiang-Jen Huang, Mezzapelle, J., Mocuta, A., Womack, S., Gribelyuk, M., Jones, E.C., Miller, R.J., Wong, H.-S.P., Haensch, W. |
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| Zdroj: | Digest. International Electron Devices Meeting; 2002, p267-270, 4p |
| Databáze: | Complementary Index |
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