A comparative 3D simulation approach with extensive experimental Vt/Avt data and analysis of LER/RDF/reliability of CMOS SRAMs at 40-nm node and beyond.
| Autor: | Okada, T., Yoshimura, H., Aikawa, H., Sengoku, M., Fujii, O., Oyamatsu, H. |
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| Zdroj: | 2010 International Conference on Simulation of Semiconductor Processes & Devices (SISPAD); 2010, p121-124, 4p |
| Databáze: | Complementary Index |
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